Read full article (anandtech.com)Samsung late on Wednesday said that it had initiated mass production of DDR4 memory chips using its second generation '10 nm-class' fabrication process. The new manufacturing technology shrinks die size of the new DRAM chips and improves their performance as well as energy efficiency. To do that, the process uses new circuit designs featuring air spacers (for the first time in DRAM industry). The new DRAM ICs (integrated circuits) can operate at 3600 Mbit/s per pin data rate (DDR4-3600) at standard DDR4 voltages and have been validated with major CPU manufacturers already.
Samsung starts production of 8 GB DDR4-3600 ICs using 2nd gen 10nm-class tech
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Samsung starts production of 8 GB DDR4-3600 ICs using 2nd gen 10nm-class tech
Samsung starts production of 8 GB DDR4-3600 ICs using 2nd gen 10nm-class tech
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